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DISCRETE SEMICONDUCTORS
DATA SHEET
BF990A N-channel dual-gate MOS-FET
Product specification File under Discrete Semiconductors, SC07 April 1991
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
FEATURES * Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS * RF applications such as: - Television tuners with 12 V supply voltage - Professional communication equipment. PINNING PIN 1 2 3 4 SYMBOL s, b d g2 g1 drain gate 2 gate 1 DESCRIPTION source
Top view Marking code: M87.
MAM039 handbook, halfpage
BF990A
DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate.
4
3 g2 g1
d
1
2 s,b
Fig.1 Simplified outline (SOT143) and symbol.
QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj Y fs Cig1-s Crs F PARAMETER drain-source voltage drain current total power dissipation junction temperature transfer admittance feedback capacitance noise figure f = 1 kHz; ID = 10 mA; VDS = 10 V; VG2-S = 4 V up to Tamb = 60 C CONDITIONS - - - - 19 TYP. MAX. 18 30 200 150 - 3 - 3 UNIT V mA mW C mS pF fF dB
input capacitance at gate 1 f = 1 MHz; ID = 10 mA; VDS = 10 V; VG2-S = 4 V 2.6 f = 1 MHz; ID = 10 mA; VDS = 10 V; VG2-S = 4 V 25 f = 800 MHz; GS = 5 mS; BS = BSopt; ID = 10 mA; VDS = 10 V; VG2-S = 4 V 2
April 1991
2
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
LIMITING VALUES In according with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS ID IG1-S IG2-S Ptot Tstg Tj PARAMETER drain-source voltage drain current (DC) gate 1-source current gate 2-source current total power dissipation storage temperature junction temperature up to Tamb = 60 C; note 1 CONDITIONS - - - - - -65 - MIN.
BF990A
MAX. 18 30 10 10 200 +150 150 V
UNIT mA mA mA mW C C
THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 VALUE 460 UNIT K/W
Note to the Limiting values and the Thermal characteristics 1. Device mounted on a ceramic substrate of 8 x 10 x 0.7 mm.
handbook, halfpage
200
MGE792
Ptot (mW)
100
0 0 100 Tamb (C) 200
Fig.2 Power derating curve.
April 1991
3
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
STATIC CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL IG1-SS IG2-SS PARAMETER gate 1 cut-off current gate 2 cut-off current CONDITIONS VG1-S = 7 V; VG2-S = VDS = 0 VG2-S = 7 V; VG1-S = VDS = 0 IG1-SS = 10 mA; VG2-S = VDS = 0 IG2-SS = 10 mA; VG1-S = VDS = 0 ID = 20 A; VDS = 10 V; VG2-S = 4 V ID = 20 A; VDS = 10 V; VG1-S = 0 - - 8 8 - - MIN.
BF990A
MAX. 25 25 20 20 -1.3 -1.1
UNIT nA nA V V V V
V(BR)G1-SS gate 1-source breakdown voltage V(BR)G2-SS gate 2-source breakdown voltage V(P)G1-S V(P)G2-S gate 1-source cut-off voltage gate 2-source cut-off voltage
DYNAMIC CHARACTERISTICS Measuring conditions (common source): ID = 10 mA; VDS = 10 V; VG2-S = 4 V; Tamb = 25 C. SYMBOL Y fs Cig1-s Cig2-s Crs Cos F PARAMETER transfer admittance input capacitance at gate 1 input capacitance at gate 2 feedback capacitance output capacitance noise figure f = 1 kHz f = 1 MHz f = 1 MHz f = 1 MHz f = 1 MHz f = 800 MHz; GS = 5 mS; BS = BSopt CONDITIONS - - - - - MIN. 18 TYP. 19 2.6 1.4 25 1.2 2 MAX. - 3 - - - 3 UNIT mS pF pF fF pF dB
handbook, halfpage
20
MGD833
VG1-S +0.4 V
handbook, halfpage
24
MGD832
ID (mA) +0.2 V
ID (mA)
max
typ
16 0V 10 -0.2 V -0.4 V -0.6 V 0 0 4 8 12 VDS (V) 16 0 -1.5 -1.0 -0.5 0
min
8
0.5 1.0 VG1-S (V)
VG2-S = 4 V; Tamb = 25 C.
VDS = 10 V; VG2-S = 4 V; Tamb = 25 C.
Fig.3 Output characteristics.
Fig.4 Transfer characteristics.
April 1991
4
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
PACKAGE OUTLINE
BF990A
handbook, full pagewidth
0.75 0.60
0.150 0.090 4 0.1 max 10 max
o
3.0 2.8 1.9 3
B A 0.2 M A B
10 max
o
1.4 1.2
2.5 max
1 1.1 max
o
2 0.1 M A B
30 max
0.88
0 0.1 1.7
0.48
0 0.1
MBC845
TOP VIEW
Dimensions in mm. See also "Soldering recommendations".
Fig.5 SOT143.
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
April 1991
5
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
NOTES
BF990A
April 1991
6
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
NOTES
BF990A
April 1991
7
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1996
Internet: http://www.semiconductors.philips.com
SCA52
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
117061/00/02/pp8
Date of release: April 1991
Document order number:
9397 750 01516

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